Samsung Preparing 400-Layer V-NAND Using Vertical Bonding For Higher Storage Capacity ...Middle East

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Samsung Preparing 400-Layer V-NAND Using Vertical Bonding For Higher Storage Capacity
source : Wccf tech ( Middle East ) () 125
Samsung's next-gen 400-layer V-NAND will be able to store more data and will boast higher reliability for advanced storage solutions. Samsung to increase the memory cells drastically for the next-gen and is aiming for up to 1000 layers in the future, 400-layer V-NAND with vertical bonding coming soon A month ago, the semiconductor giant Samsung started its mass production of the QLC 9th gen V-NAND, which aims to enhance the performance, storage capacity, and reliability of the next-gen storage solutions. A recent report from the Korean Economic Daily suggests that Samsung has already planned to reach even higher performance with […]

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